Computation for crosstalk effects in p-on-n Hg1-xCdxTe heterojunction IRFPA radiated by using uniformly parallel light
Proceedings of SPIE - the International Society for Optical Engineering
in our work, a three-dimensional IRFPA model has been constructed to conduct device simulations for drift-diffusion based Hg1 CdTe devices. The model uses the finite element method and numerical errors are automatically eliminated during computation. Computational results can thus easily achieve accuracy. The computer model was constructed by using C++ language. We have successfully represented simulation results in three-dimensional graphics. In this paper, a model for analyzing infrared-illuminated p-on-n photodiodes is presented. The computational results were verified analytically and experimentally. Furthermore, an IRFPA device model was built for calculating crosstalk by using uniformly collimated infrared radiation. Devices used for the model were linear FPAs. Ohmic contacts with zero bias were applied on electrodes. Other physics phenomena such as recombinations were also considered in the analyses. This model and simulation approach can provide an efficient way to reduce crosstalk in designing advanced MCT IRFPA devices.
Dai, H., & Sanders, T. (2000). Computation for crosstalk effects in p-on-n Hg1-xCdxTe heterojunction IRFPA radiated by using uniformly parallel light. Paper presented at the Proceedings of SPIE - the International Society for Optical Engineering, , 4028 365-372.