Document Type

Conference Proceeding

Publication Title

Proceedings of SPIE - the International Society for Optical Engineering

Abstract

HgCdTe has emerged as an important electronic material because of its IRFPA applications. Technologies for growing the material are advanced and current sources for the material are more readily available than in the past. This brings an advantage to the manufacturing other types of HgCdTe devices. PHEMTs are attractive as applications of high-speed devices. In this paper, a model for PHEMT devices by using Hg1 Cd1Te as device materials is presented. High digital performance of the device is expected because electron mobility ofthe material is very high at low temperatures.

First Page

8

Last Page

16

DOI

10.1117/12.391910

Publication Date

7-18-2000

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